PLANE (1-102) SAPPHIRE WAFERS

10.0 USD

Min. Order:	1 Piece/Pieces
Payment Terms:	T/T
Supply Ability:	30000 pcs / month
Place of Origin:	Henan

Company Profile

CRYSCORE OPTOELECTRONIC LIMITED

Location:	Jiaozuo, Henan, China (Mainland)
Business Type:	Manufacturer

Product Detail

Production Capacity:	30000 pcs / month
Delivery Date:	10 days

Product Description

R plane(1-102) sapphire wafers are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications. R plane is the non-polar plane of sapphire. So the different positions of R-plane in sapphire devices, the mechanical, thermal, electrical and optical properties of sapphire devices will vary greatly, which will also affect the subsequent processing performance, processing efficiency and processing yield of sapphire devices.

In order to make the crystal structure of sapphire ingot and subsequent sapphire products consistent, the more common method is to process an A-direction surface on the sapphire ingot as the flat orientation of sapphire wafer (subsequent sapphire products), so that the R-direction position of sapphire ingot and the wafer is consistent.

Specifications of R-Plane (1-102) Sapphire Wafers

Item	2 -inch R-plane(1-102) 430μm Sapphire Wafers
Crystal Materials	99,999%, High Purity, Monocrystalline Al2O3
Grade	Prime, Epi-Ready
Surface Orientation	R-plane(1-102)
Diameter	50.8 mm +/- 0.1 mm
Thickness	430 μm +/- 25 μm
Primary Flat Orientation	45 +/- 1deg. counter-clockwise from C-axis projection on R-plane
Primary Flat Length	16.0 mm +/- 1.0 mm
Single Side Polished	Front Surface	Epi-polished, Ra < 0.5 nm (by AFM)
(SSP)	Back Surface	Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished	Front Surface	Epi-polished, Ra < 0.5 nm (by AFM)
(DSP)	Back Surface	Epi-polished, Ra < 0.5 nm (by AFM)
TTV	< 10 μm
BOW	< 10 μm
WARP	< 10 μm
Cleaning / Packaging	Class 100 cleanroom cleaning and vacuum packaging,
	25 pieces in one cassette packaging or single piece packaging.