PLANE (10-10) SAPPHIRE WAFERS
| Min. Order: | 1 Piece/Pieces |
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| Payment Terms: | T/T |
| Supply Ability: | 30000 pcs / month |
| Place of Origin: | Henan |
Company Profile
| Location: | Jiaozuo, Henan, China (Mainland) |
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| Business Type: | Manufacturer |
Product Detail
| Production Capacity: | 30000 pcs / month |
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| Delivery Date: | 10 days |
Product Description
Due to its application prospects in solar-blind ultraviolet detection, MgZnO alloy semiconductor films with suitable band gaps have attracted more and more attention. A series of MgxZn1-xO thin films with different compositions were prepared on M plane sapphire wafers by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD).
CRYSCORE provides M plane (10-10) sapphire wafers with excellent surface quality. The roughness on the epi-polished side is lower than 0.5 nm.
Specifications of M-Plane (10-10) Sapphire Wafers
Item | 2-inch M-plane(10-10) 430μm Sapphire Wafers | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Grade | Prime, Epi-Ready | |
Surface Orientation | M-plane(11-10) | |
Diameter | 50.8 mm +/- 0.1 mm | |
Thickness | 430 μm +/- 25 μm | |
Primary Flat Orientation | C-plane(0001) +/- 0.2° | |
Primary Flat Length | 16.0 mm +/- 1.0 mm | |
Single Side Polished (SSP) | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm | |
Double Side Polished (DSP) | Front Surface | Epi-polished, Ra < 0.5 nm (by AFM) |
Back Surface | Epi-polished, Ra < 0.5 nm (by AFM) | |
TTV | < 10 μm | |
BOW | < 10 μm | |
WARP | < 10 μm | |
Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, 25 pieces in one cassette packaging or single piece packaging. | |
Note: Custom sapphire wafers with any orientation and any thickness can be provided.
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