solar wafer

Place of Origin:	Hebei

Location:	Shijiazhuang, Hebei, China (Mainland)
Business Type:	Manufacturer, Trading Company

Item	Spec
Crystal structure	Mono-crystalline
Crystal method	CZ
Conductance Type	P
Dopant	B
dimension	125*125±0.4	125*125±0.4
Diameter	Φ150±0.4	Φ165±0.4
Wafer thickness range	190/200±20μm	190/200±20μm
Crystal orientation	<100>±1	<100>±1
Resistivity( Ω.cm)	1-3/3-6	1-3/3-6
Lifetime( μs)	≥15	≥15
Carbon concentration( atoms/cm3 )	≤5*1016	≤5*1016
Oxygen concentration( atoms/cm3 )	≤0.95*1018	≤0.95*1018
Etching Pit( pcs/cm3 )	≤2000	≤2000
TTV	≤30μm	≤30μm
Camber	≤30μm	≤30μm
Saw mark	≤15μm(depth)	≤15μm(depth)
Wafer surface	No crack, obvious pits, surface clean, no abnormal spots no pinholes.
Gap	No
Edge defect	Edge defect width≤0.2mm,extention≤0.5mm with total quantity≤2,,distance≥30mm
Luminance edge	Length≤1/2 of wafer dimension, width≤1/3 of wafer thickness