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Polysilicon Ingots
1.0 USD
| Payment Terms: | L/C, T/T |
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| Supply Ability: | 1 |
| Place of Origin: | Fujian |
Company Profile
| Location: | Chongqing, China (Mainland) |
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| Business Type: | Manufacturer |
Product Detail
| Means of Transport: | 0 |
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| Brand Name: | 0 |
| Specification: | 0 |
| Function: | 0 |
| Patent Rights: | 0 |
| Certificate: | 0 |
| Export Area: | 0 |
| Cooperative Company: | 0 |
| Production Capacity: | 1 |
| Packing: | ctns |
| Delivery Date: | 15-30 |
Product Description
Features Specifications: Polysilicon Ingots
High quality Silicon Ingots 6" and 8" inch high quality ingots
Growing method: CZ
Purity: 6N at least, solar grade
Crystallinity: Mono-crystalline
Donor type / Dopant: P / Boron
Dislocation density: d3000cm-2
Orientation: 100±3°face and diagonal
Oxygen concentration: d1χ1018 atoms/cm3
Carbon concentration: d5χ1016 atoms/cm3
Resistivity: 0.5 - 3.0 ohm/cm or 3.0 - 6 ohm/cm
High quality Silicon Ingots 6" and 8" inch high quality ingots
Growing method: CZ
Purity: 6N at least, solar grade
Crystallinity: Mono-crystalline
Donor type / Dopant: P / Boron
Dislocation density: d3000cm-2
Orientation: 100±3°face and diagonal
Oxygen concentration: d1χ1018 atoms/cm3
Carbon concentration: d5χ1016 atoms/cm3
Resistivity: 0.5 - 3.0 ohm/cm or 3.0 - 6 ohm/cm