1N5819 Schottky Diode Wafer
Place of Origin:
Jiangsu
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Company Profile
Yangzhou Genesis Microelectronics Co.,Ltd.
Location:
yangzhou, Jiangsu, China (Mainland)
Product Description
Specifications:
1) Size: 0.81mm x 0.81mm
2) P: 300mW
3) Io: 1A
4) VR: ≥40V
5) VF: ≤0.55V
6) IR: <1.2mA
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