MMBD4148-SOT-23 Plastic-Encapsulated Diodes
| Place of Origin: | Jiangsu |
|---|
Company Profile
| Location: | Jiangyin, Jiangsu, China (Mainland) |
|---|
Product Description
Supply Ability: 40,000,0000pcs/month
Certification(s): QS9000, ISO9002
Switching diode:
1) Power dissipation: 350 mW (Tamb=25oC)
2) Forward current: 300mA
3) Reverse voltage: 75V
4) Operating and storage junction temperature range: TJ, Tstg:
-55 ~ 150oC
5) Electrical characteristics: (Tamb=25oC unless otherwise specified)
a) Reverse breakdown voltage: Min: 75V (IR=100 uA)
b) Reverse voltage leakage current: Max: 2.5 uA (VR=75V)
c) Forward voltage: Max: 1.25 V (IF=150 mA)
d) Diode capacitance: Max: 2 pF (VR=0V, f=1MHz)
e) Reverse recovery time: Max: 4nS
Min Order Quantity:10,000pcs
Payment Term:T/T, L/C, D/P
Delivery Time:7 work days
Price Term:FOB
Certification(s): QS9000, ISO9002
Switching diode:
1) Power dissipation: 350 mW (Tamb=25oC)
2) Forward current: 300mA
3) Reverse voltage: 75V
4) Operating and storage junction temperature range: TJ, Tstg:
-55 ~ 150oC
5) Electrical characteristics: (Tamb=25oC unless otherwise specified)
a) Reverse breakdown voltage: Min: 75V (IR=100 uA)
b) Reverse voltage leakage current: Max: 2.5 uA (VR=75V)
c) Forward voltage: Max: 1.25 V (IF=150 mA)
d) Diode capacitance: Max: 2 pF (VR=0V, f=1MHz)
e) Reverse recovery time: Max: 4nS
Min Order Quantity:10,000pcs
Payment Term:T/T, L/C, D/P
Delivery Time:7 work days
Price Term:FOB