Product Description
Commodity:
Monocrystalline Silicon Ingot
Growth Method : CZ
Type/Dopant : N/Phosphorus
Orientation: <100>+/-3Degree Max
Resistivity: 1~5.0 ohm. Cm
Diameter: 4 inch
Surface : As Grown
Ingot Length : >100mm
Chip, Haze, Pits, Scratch: Free
Origin : China
Oxygen: Carbon: Lifetime: >10