Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED
| Place of Origin: | Zhejiang |
|---|
Company Profile
| Location: | Shenzhen, Guangdong, China (Mainland) |
|---|---|
| Business Type: | Manufacturer |
Product Detail
| Model No.: | DL-583PTDA-1PTD10 |
|---|
Product Description
LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor
5mm LED Phototransistor
- Features:
- 5mm round standard t-1 3/4 package.
- Fast response time.
- High photo sensitivity.
- Small junction capacitance.
- The product itself will remain within RoHS compliant Version.
- Descriptions:
- The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
- Due to its black epoxy, the device is matched to visible light and infrared radiation.
- Applications:
- Infrared applied system.
- Optoelectronic automatic control system.
- Optoelectronic switch.
- Camera.
- Printer.
- Counters and sorters.
- Encoders.
- Floppy disk drive.
- Video camera, tape and card readers.
- Position sensors.
- Absolute Maximum Ratings at Ta=25
| Parameters | Symbol | Rating | Unit |
| Power Dissipation | PD | 75 | mW |
| Collector-Emitter Voltage | VCEO | 30 | V |
| Emitter-Collector-Voltage | VECO | 5 | V |
| Collector Current | IC | 20 | mA |
| Operating Temperature | TOPR | -40 to +85 | |
| Storage Temperature | TSTG | -40 to +100 | |
| Lead Soldering Temperature | TSOL | 260 |
Electrical Optical Characteristics at Ta=25
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | --- | --- | V |
IC=100μA, Ee=0mW/cm² |
| Emitter-Collector Breakdown Voltage | BVECO | 5 | --- | --- | V |
IE=100μA, Ee=0mW/cm² |
| Collector-Emitter Saturation Voltage | VCE(SAT) | --- | --- | 0.40 | V |
IC=0.70mA, Ee=1mW/cm2 |
| Collector Dark Current | ICEO | --- | --- | 100 | nA |
Ee=0mW/cm², VCE=20V |
| On-State Collector Current | IC(ON) | 0.70 | 2.00 | --- | mA |
Ee=1mW/cm², VCE=5V |
| Optical Rise Time (10% to 90%) | TR | --- | 15 | --- | μs |
VCE=5V, IC=1mA, RL=1000Ω |
| Optical Fall Time (90% to 10%) | TF | --- | 15 | --- | ||
| Reception Angle | 2θ1/2 | --- | 10 | --- | Deg | |
| Wavelength Of Peak Sensitivity | λP | --- | 940 | --- | nm | |
| Rang Of Spectral Bandwidth | λ0.5 | 700 | --- | 1200 | nm |
Infrared Emitting Diode Package Dimension:
