GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode
| Place of Origin: | Zhejiang |
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Company Profile
| Location: | Shenzhen, Guangdong, China (Mainland) |
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| Business Type: | Manufacturer |
Product Detail
| Model No.: | DL-PCB0805IRCA-1IR120 |
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Product Description
GaAs Chip Material 120 Degree 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode
SMD Infrared Emitting Diode
- Features:
- Package in 8mm tape on 7" diameter reel.
- Compatible with automatic placement equipment.
- Compatible with infrared and vapor phase reflow solder process.
- Mono-color type.
- The product itself will remain within RoHS compliant Version.
- Descriptions:
- The 0805IR is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with flat top view lens.
- The device is spectrally matched with photodiode and phototransistor.
- Applications:
- PCB mounted infrared sensor.
- Infrared emitting for miniature light barrier.
- Floppy disk drive.
- Optoelectronic switch.
- Smoke detector.
- Absolute Maximum Ratings at Ta=25
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity * | Ee | 0.20 | 0.35 | --- | mW/sr | IF=20mA |
| --- | 2.50 | --- |
IF=100mA (Pulse Width≤100µs, Duty≤1%) |
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| Viewing Angle * | 2θ 1/2 | --- | 140 | --- | Deg | IF=20mA (Note 2) |
| Peak Emission Wavelength | λp | --- | 940 | --- | nm | IF=20mA (Note 3) |
| Spectral Bandwidth | λ | --- | 50 | --- | nm | IF=20mA |
| Forward Voltage | VF | 0.80 | 1.20 | 1.50 | V | IF=20mA |
| --- | 1.60 | 1.80 |
IF=100mA (Pulse Width≤100µs, Duty≤1%) |
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| Reverse Current | IR | --- | --- | 10 | µA | VR=5V |
Notes:
Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 100 | mW |
|
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) |
IFP | 1.00 | A |
| Forward Current | IF | 50 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -40 to +80 | |
| Storage Temperature Range | Tstg | -40 to +100 | |
| Lead Soldering Temperature | Tsld | 260 for 5 Seconds | |
Infrared Emitting Diode Package Dimension:
