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Tyntek 40mil Chip 1w High Power ir led diode Peak Emission Wavelength 850nm 940nm

Place of Origin: Zhejiang

Company Profile

Location: Shenzhen, Guangdong, China (Mainland)
Business Type: Manufacturer

Product Detail

Model No.: DL-HP10SIR

Product Description

  High Power Infrared LED Diode LED Light Components 

 

Features:

  1. High reliability.
  2. High radiant intensity.
  3. Low forward voltage.
  4. Peak wavelength λp=850nm.
  5. The product itself will remain within RoHS compliant version.

 

Descriptions:

  1. The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
  2. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

 

Applications:

  1. Free air transmission system.
  2. Optoelectronic switch.
  3. Floppy disk drive.
  4. Infrared applied system.
  5. Smoke detector.

Our Services
1. We have our own independent R&D department on existing products for better maintenance, we still continue to develop high-tech products. We have our own patented products.
2. Our products must pass strict quality control procedures.
3. We have advanced production equipment.
4. We use the raw materials are from domestic and foreign well-known brand manufacturers.
5. After repeated tests before shipment.
Advantages
1. Long life: product life of up to 50,000 hours;
2. Nanosecond response time, brightness and color make it easy to dynamically control: enables dynamic color changes and digital control;
3. A large design space: the organic architecture can be realized with the integration to only see the effect of light not seen light;
4. Environmental protection: no toxic metals mercury, no infrared and ultraviolet radiation;
5. Color: different wavelengths produce different colored light, bright saturated, no filter, can control red, green and blue primary colors to form a variety of colors, can realize full-color gradients, and other color effects.

 

Absolute Maximum Ratings at Ta=25

Parameters Symbol Max. Unit
Power Dissipation PD 1000 mW

Peak Forward Current

(1/10 Duty Cycle, 0.1ms Pulse Width)

IFP 1.00 A
Forward Current IF 350 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -10 to +70
Storage Temperature Range Tstg -20 to +80
Soldering Temperature Tsld 260 for 5 Seconds
 

Electrical Optical Characteristics at Ta=25

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity Ie 110 180 --- mW/Sr IF=350mA
Viewing Angle * 2θ1/2 --- 120 --- Deg (Note 1)
Peak Emission Wavelength λp --- 850 --- nm IF=350mA
Spectral Bandwidth λ --- 45 --- nm IF=350mA
Forward Voltage VF 1.30 1.50 1.80 V IF=350mA
Reverse Current IR --- --- 50 µA VR=5V
 

 

Notes:

1. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intens

 

 High Power Infrared LED Package Dimension:

 

 

 

 

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