LC4128V-75TN100C Lattice Semiconductor - 3.3V/2.5V/1.8V In-System Programmable SuperFAST High Densi

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3.3V/2.5V/1.8V In-System Programmable SuperFAST High Density PLDs

Description:

The K4M513233C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications

Applications:

•  3.0V & 3.3V power supply.

•  LVCMOS compatible with multiplexed address.

•  Four banks operation.

•  MRS cycle with address key programs.

     -. CAS latency (1, 2 & 3).

     -. Burst length (1, 2, 4, 8 & Full page).

     -. Burst type (Sequential & Interleave).

•  EMRS cycle with address key programs.

•  All inputs are sampled at the positive going edge of the system

    clock.

•  Burst read single-bit write operation.

•  Special Function Support.

     -. PASR (Partial Array Self Refresh).

     -. Internal TCSR (Temperature Compensated Self Refresh)   

•   DQM for masking.

•  Auto refresh.

•  64ms refresh period (8K cycle).

•  Commercial Temperature Operation (-25°C ~ 70°C).

•  Extended Temperature Operation (-25°C ~ 85°C).

•  90Balls FBGA

Specifications: