Introduction:
Our technique is called Centrifugal Arc Method. We use high purity quartz sand to produce high purity quartz crucible, which is used for the growth of single silicon crystal.
Impurity content:Al\Fe\Ca\Mg\Cu\Co\Ni\Mn\Ti\Na\K\Li\B≤ 30*10-6.
Product features
1. Solution of the evaporation, concentrate or crystallization
2. Solution of the crystallization
3. Solution of the concentrate
4. Burning solid material