AE-6000C-type flexible shaft crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, Using czochralski Technique dislocation-free crystal growth equipment, it can produce high quality single crystal which for solar photovoltaic devices.
Main technical parameters |
Properties | Model | AE-85 | AE-95 | AE-120 | Diameter of Growth Tank (mm) | 850 | 950 | 1200 | Ingot diameter (inch) | 6 - 8 | 8 - 10 | 8-16 | Silica crucible size (inch) | 18-20 | 22-24 | 24-28 | Max charge amount (Kg) | 95 | 150 | 260 | Max crystal length (mm) | 2000 | 2000 | 2000 | Seed pulling rate(mm/Hr) | 0-508 | 0-508 | 0-508 | Seed Jog Speed (mm/Min) | 0-508 | 0-508 | 0-508 | Seed rotation rate (rpm) | 0-40 | 0-40 | 0-40 | Crucible Elevate Rate (mm/Hr) | 0-128 | 0-128 | 0-128 | Crucible Jog Speed (mm/Min) | 0-50.8 | 0-50.8 | 0-50.8 | Crucible rotation rate (rpm) | 0-20 | 0-20 | 0-20 | Crucible Travel stroke (mm) | 400 | 420 | 480 | Maximum weight for crucible support (Kg) | 165 | 230 | 450 | Main line pump rate (SL/Sec) | 70 | 70 | 150 | Auxiliary pump rate (SL/Sec) | 8 | 8 | 8 | Ultimate pressure (Pa) | less than 4 | less than 4 | less than 4 | Permissible leak rate (Pa/Hr) | less than 6 | less than 6 | less than 6 | Gas flow control range (SL/Min) | 4-200 | 4-200 | 4-200 | Working pressure range (Pa) | 1500-5000 | 1500-5000 | 1500-5000 | AC power input (3 phase, 380V) | 140 KW | 200 KW | 250 KW | Number of Heating Elements | 1 | 2 | 2 | Magnetic Coil | Optional | Optional | Optional |
|
