Power amplifer 7W power output 400-470MHz use for radio, RF products
| Min. Order: | 10 Piece/Pieces |
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| Payment Terms: | T/T, WU |
| Supply Ability: | 6000 |
| Place of Origin: | Guangdong |
Company Profile
| Location: | Shenzhen, Guangdong, China (Mainland) |
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| Business Type: | Manufacturer |
| Main Products: | Wireless Radio Modem, Wireless Data Radio, Wireless Audio Module, Wireless RF Data Modules, Rf Transmission |
Product Detail
| Model No.: | RA07H4047M |
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| Means of Transport: | Air |
| Brand Name: | MITSUBISHI |
| Power output: | 7W |
| frequency: | 400-470MHz |
| Production Capacity: | 6000 |
| Packing: | standard |
| Delivery Date: | 3-6 days |
Product Description
RA07H4047M
Detailed Product Description
1. MITSUBISHI RF Power Module Amplifier
2. Frequency Range: 400-470MHz
3. Output Power: 7W
4. Size: 30 x 10 x 5.4 mm
Silicon RF Power Semiconductors
High Frequency Devices
12.5V Operation High Output Power MOS FET Modules
Si RF Power Module Amplifier
UHF 300-500MHz / Low Power
Low Output Power Si RF Module MOSFET
FEATURES
1 | Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V) |
2 | Pout > 7W @ VDD = 12.5V , VGG = 3.5V , Pin = 20mW |
3 | ηT > 40% @ Pout = 7W (VGG control) , VDD = 12.5V , Pin = 20mW |
4 | Broadband Frequency Range: 400-470MHz |
5 | Low-Power Control Current IGG = 1mA (typ) at VGG = 3.5V |
6 | Module Size: 30 x 10 x 5.4 mm |
7 | Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power |