Power amplifer 30W 400MHz-470MHz PA Orignal PA Cost Effective
| Min. Order: | 10 Piece/Pieces |
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| Payment Terms: | T/T, WU |
| Supply Ability: | 6000 |
| Place of Origin: | Guangdong |
Company Profile
| Location: | Shenzhen, Guangdong, China (Mainland) |
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| Business Type: | Manufacturer |
| Main Products: | Wireless Radio Modem, Wireless Data Radio, Wireless Audio Module, Wireless RF Data Modules, Rf Transmission |
Product Detail
| Model No.: | RA30H4047M |
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| Means of Transport: | Air |
| Brand Name: | MITSUBISHI |
| Power output: | 30W |
| frequency: | 400-470MHz |
| Production Capacity: | 6000 |
| Packing: | standard |
| Delivery Date: | 3-6 days |
Product Description
RA30H4047M
Detailed Product Description
1. MITSUBISHI MOSFET Amplifier RF Power Module
2. Frequency Range: 400-470MHz
3. Output Power: 30W
4. Module Size: 66 x 21 x 9.88 mm
Silicon RF Power Semiconductors
High Frequency Devices
Si RF Power Module
High Output Power Si MOS FET Module
FEATURES
1 | Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V) |
2 | Pout > 30W , ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW |
3 | Broadband Frequency Range: 400-470MHz |
4 | Low-Power Control Current IGG = 1mA (typ) at VGG = 5V |
5 | Module Size: 66 x 21 x 9.88 mm |
6 | Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power |