Min. Order: | 10 Piece/Pieces |
---|---|
Payment Terms: | T/T, WU |
Supply Ability: | 6000 |
Place of Origin: | Guangdong |
Location: | Shenzhen, Guangdong, China (Mainland) |
---|---|
Business Type: | Manufacturer |
Main Products: | Wireless Radio Modem, Wireless Data Radio, Wireless Audio Module, Wireless RF Data Modules, Rf Transmission |
Model No.: | RA30H1317M |
---|---|
Means of Transport: | Air |
Brand Name: | MITSUBISHI |
Production Capacity: | 6000 |
Packing: | standard |
Delivery Date: | 3-6 days |
Silicon RF Power Semiconductors
High Frequency Devices
RF MOSFET Power Module
High Output Power Si MOSFET Module
VHF 50-300MHz / High Power
FEATURES
1 | Enhancement- Mode MOSFET Transistors (IDD ≅ 0 @ VDD = 12.5V , VGG = 0V) |
2 | Pout > 30W , ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW |
3 | Broadband Frequency Range: 135-175MHz |
4 | Low-Power Control Current IGG=1mA (typ) at VGG = 5V |
5 | Module Size: 66 x 21 x 9.88 mm |
6 | Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power |